junction diode
英 [ˈdʒʌŋkʃn ˈdaɪəʊd]
美 [ˈdʒʌŋkʃn ˈdaɪoʊd]
（面）结型二极管
双语例句
- This method can not only accurately measure the values of series resistance, junction capacitance, junction voltage, and ideality factor at various forward biases, but also detect and measure an interfacial layer in a real diode.
利用该方法，不仅可以得到二极管在不同电压下的串联电阻、结电容、结电压、理想化因子等值，还能判断一个实际的二极管有无界面层存在并得到其界面层阻抗值。 - An expression is presented to determine the spectral noise power density of microwave solid state noise diodes based on the theory of PN junction avalanche multiplication, the limited multiplication and the adaptable diode model.
本文根据PN结雪崩噪声理论、有限倍增因子和合适的二极营模式提出了微波固体噪声二极管噪声功率谱密度的表示式，并对其谱特性进行分析。 - The heat-reaction characteristics of Ni/ Si and TiN/ Ni/ Si structure and the regularity for forming the NiSi film have been studied deeply and formed the excellent Ni-salicide shallow junction diode.
文中对Ni／Si和TiN／Ni／Si的热反应特性以及NiSi薄膜的形成规律进行了详细的研究。制备了优质的Ni硅化物浅结二极管。 - The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junction diode
4H-SiCpn结型二极管击穿特性中隧穿效应影响的模拟研究 - The junction has critical IV characteristic curve of a normal diode, and the voltage to turn on is ( 1.0 V).
该结呈现典型的二极管伏安特性曲线，开启电压为1.0V。 - Studies on the Thermal Damage Mechanisms of a PIN Junction Optoelectronic Diode by Laser
激光对PIN结光电二极管热破坏机理的研究 - A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6 μ m industrial CMOS technology.
采用工业标准06μMCMOS工艺设计了以反向击穿硅pn结为基础的光发射器件。 - Monolithic ZnO/ Si pn Junction Diode Storage Correlator/ Convolver
单片式ZnO/Sipn结二极管存储相关器/卷积器 - The storage mechanism of pn junction diode is illustrated and the basic design of the device, manufacture methods as well as its performance parameters are also described.
阐明了pn结二极管存储机理，叙述了该器件的基本设计，制作方法和性能参数。 - It was essentially different with the negative capacitance observed in the P-N junction in the light-emitting diode.
研究表明，CCTO陶瓷中的负电容效应与Sandoval等在发光二极管中P-N结上观察到的负电容效应有本质不同。 - It is found that P-n junction can provide not only diode rectifying function, but also electro-magnetic, and electro-optic effects, which is ascribed to the introduction of oxide material.
实验发现得到的p-n结不仅具有半导体二极管的整流功能。同时还引入了电-磁、电-光等耦合效应，这些新的特性的产生是和引入的氧化物材料本身的特性分不开的。 - However, as the capacitance effect of the diode P-N junction, diode parameters such as reverse-recovery time must be studied before the diode can be used correctly as pulse switch.
但二极管PN结中存在电容效应，若要正确地用做脉冲开关，就必须了解二极管的反向恢复时间等重要参数。 - Due to the on/ off characteristic of P-N junction to the forward and reverse current, semiconductor diode often uses as switch in pulse circuit.
利用PN结对正反向电流表现出的通断特性，半导体二极管常在脉冲电路中作为开关使用。